IndiumV3, Russie, Analysis, bibRecord, 000066

Quantum dot laser

Identifieur interne : 000066 ( Russie/Analysis ); précédent : 000065; suivant : 000067

Quantum dot laser

Auteurs : RBID : Pascal:11-0306589

Descripteurs français

Pascal (Inist)
- Laser semiconducteur, Laser point quantique, Dispositif optoélectronique, Point quantique, Hétérostructure, Gallium Arséniure, Indium Arséniure, Matériau optique, Matériau laser, InGaAs/GaAs, 4255P, 4270H.

English descriptors

KwdEn :
- Gallium Arsenides, Heterostructures, Indium Arsenides, Laser materials, Optical materials, Optoelectronic devices, Quantum dot lasers, Quantum dots, Semiconductor lasers.

Abstract

Discovery of self-organized epitaxial quantum dots (QDs) resulted in multiple breakthroughs in the field of physics of zero-dimensional heterostructures and allowed the advancement of optoelectronic devices, most remarkably, lasers. The most advanced and well-understood results are obtained for lasers based on Stranski-Krastanow InGaAs-GaAs three-dimensional QDs; even significant progress in the understanding of basic lasing properties is also achieved for QDs made of II-VI materials and 'native' QDs formed by nanoscale alloy phase separation in the InGaN-AIGaN material system.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002F11
to stream Main, to step Repository: 002662
to stream Russie, to step Extraction: 000066

Links to Exploration step

Pascal:11-0306589

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum dot laser</title>
<author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26</s1>
<s2>194021, St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021, St Petersburg</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>St Petersburg Physics and Technology Centre for Research & Education of the Russian Academy of Sciences, Khlopina str. 8/3</s1>
<s2>195220 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>195220 St Petersburg</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>VI Systems GmbH, Hardenbergstrasse 7</s1>
<s2>10623 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0306589</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0306589 INIST</idno>
<idno type="RBID">Pascal:11-0306589</idno>
<idno type="wicri:Area/Main/Corpus">002F11</idno>
<idno type="wicri:Area/Main/Repository">002662</idno>
<idno type="wicri:Area/Russie/Extraction">000066</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium Arsenides</term>
<term>Heterostructures</term>
<term>Indium Arsenides</term>
<term>Laser materials</term>
<term>Optical materials</term>
<term>Optoelectronic devices</term>
<term>Quantum dot lasers</term>
<term>Quantum dots</term>
<term>Semiconductor lasers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term>
<term>Laser point quantique</term>
<term>Dispositif optoélectronique</term>
<term>Point quantique</term>
<term>Hétérostructure</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Matériau optique</term>
<term>Matériau laser</term>
<term>InGaAs/GaAs</term>
<term>4255P</term>
<term>4270H</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Discovery of self-organized epitaxial quantum dots (QDs) resulted in multiple breakthroughs in the field of physics of zero-dimensional heterostructures and allowed the advancement of optoelectronic devices, most remarkably, lasers. The most advanced and well-understood results are obtained for lasers based on Stranski-Krastanow InGaAs-GaAs three-dimensional QDs; even significant progress in the understanding of basic lasing properties is also achieved for QDs made of II-VI materials and 'native' QDs formed by nanoscale alloy phase separation in the InGaN-AIGaN material system.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
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<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>26</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Quantum dot laser</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>From heterostructures to nanostructures</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>LEDENTSOV (N. N.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>BIMBERG (Dieter)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26</s1>
<s2>194021, St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>St Petersburg Physics and Technology Centre for Research & Education of the Russian Academy of Sciences, Khlopina str. 8/3</s1>
<s2>195220 St Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>VI Systems GmbH, Hardenbergstrasse 7</s1>
<s2>10623 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Berlin Technical University</s1>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA20><s2>014001.1-014001.8</s2>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000191849600010</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>51 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0306589</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Discovery of self-organized epitaxial quantum dots (QDs) resulted in multiple breakthroughs in the field of physics of zero-dimensional heterostructures and allowed the advancement of optoelectronic devices, most remarkably, lasers. The most advanced and well-understood results are obtained for lasers based on Stranski-Krastanow InGaAs-GaAs three-dimensional QDs; even significant progress in the understanding of basic lasing properties is also achieved for QDs made of II-VI materials and 'native' QDs formed by nanoscale alloy phase separation in the InGaN-AIGaN material system.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B70H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser point quantique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Quantum dot lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Optoelectronic devices</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>48</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>48</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>52</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Matériau laser</s0>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Laser materials</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>InGaAs/GaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>4270H</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>206</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Quantum dot laser

Quantum dot laser

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri